Stoichiometric and highly oriented in (100) direction SmS films in the metallic phase have been grown on Si(100) substrate at room temperature by pulsed laser deposition (PLO) as revealed from lattice parameter, reflectivity and electrical resistivity measurements. Above-critical compressive stress P=0.9 GPa in as grown film was determined from sample curvature measurements and attributed to stress building up in PLD process further accompanied by stress due to SmS versus Si lattice parameter mismatch. Stress relaxation and subsequent metal-to-semiconductor phase transition occurred following annealing at T = 900 K as evident from consistent changes of SmS/Si sample curvature, structural, optical and electrical properties. (C) 2011 Elsevier B.V. All rights reserved.