Epitaxial silicon thick films have been deposited at around 400 degrees C by mesoplasma chemical vapor deposition with trichlorosilane (TCS) as source gas. The deposition rate of the Si films increases linearly with the TCS flow rate and reaches 30 nm/s at 15 sccm of TCS. These films have exhibited relatively high hall mobility (similar to 200 cm(2)/V-s) independently of the deposition rate. (C) 2011 Elsevier B.V. All rights reserved.