We have fabricated a beta-FeSi2 film by metalorganic chemical vapor deposition on a Si(001) substrate with beta-FeSi2 seed crystals grown by molecular beam epitaxy, and investigated the crystallinity, surface morphology and temperature dependence of photoresponse properties of the beta-FeSi2 film. The surface of the grown beta-FeSi2 film was atomically flat, and step-and-terrace structure was clearly observed. Multi-domain structure of beta-FeSi2 whose average size was approximately 200 nm however was revealed. The photoresponse was obtained in an infrared light region (similar to 0.95 eV) at temperatures below 200 K. The external quantum efficiency reached a maximum, being as large as 25% at 100 K when a bias voltage was 2.0 V. (C) 2011 Elsevier B. V. All rights reserved.