화학공학소재연구정보센터
Thin Solid Films, Vol.520, No.6, 1799-1803, 2012
Lipon thin films grown by plasma-enhanced metalorganic chemical vapor deposition in a N-2-H-2-Ar gas mixture
Lithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasma-enhanced metalorganic chemical vapor deposition method. Upon thin films were deposited on approximately 0.2 mu m thick Au-coated alumina substrates in a N-2-H-2-Ar plasma at 13.56 MHz, a power of 150 W, and at 180 degrees C using triethyl phosphate [(CH2CH3)(3)PO4] and lithium tert-butoxide [(LiOC(CH3)(3)] precursors. Lipon growth rates ranged from 10 to 42 nm/min and thicknesses varied from 1 to 2.5 mu m. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy (XPS) revealed approximately 4 at.% N in the films. The ionic conductivity of Lipon was measured by electrochemical impedance spectroscopy to be approximately 1.02 mu S/cm, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li3PO4 targets in either mixed Ar-N-2 or pure N-2 atmosphere. Attempts to deposit Lipon in a N-2-O-2-Ar plasma resulted in the growth of Li3PO4 thin films. The XPS analysis shows no C and N atom peaks. Due to the high impedance of these films, reliable conductivity measurements could not be obtained for films grown in N-2-O-2-Ar plasma. (c) 2011 Elsevier B.V. All rights reserved.