In this paper we demonstrate p-type thin film transistors fabricated with lead sulfide (PbS) as semiconductor deposited by chemical bath deposition methods. Crystallinity and morphology of the resulting PbS films were characterized using X-ray diffraction, atomic force microscopy and scanning electron microscopy. Devices were fabricated using photolithographic processes in a bottom gate configuration with Au as source and drain top contacts. Field effect mobility for as-fabricated devices was similar to 0.09 cm(2) V-1 s(-1) whereas the mobility for devices annealed at 150 degrees C/h in forming gas increased up to similar to 0.14 cm(2) V-1 s(-1). Besides the thermal annealing, the entire fabrications process was maintained below 100 degrees C. The electrical performance of the PbS-thin film transistors was studied before and after the 150 degrees C anneal as well as a function of the PbS active layer thicknesses. Published by Elsevier B.V.