The Implant-Free Quantum Well Field-Effect Transistor (FET) offers enhanced scalability in a planar architecture through the integration of heterostructures. The Implant-Free architecture fully utilizes the band offsets between different materials, whereby charge carriers are effectively confined to a thin channel layer. This prevents sub-surface source/drain leakage observed in classical bulk Metal-Oxide-Semiconductor FETs at small gate lengths. An investigation of the V-T-tuning capabilities of this technology reveals sensitivity to both well doping and bulk voltage. (C) 2011 Elsevier B. V. All rights reserved.