The impact of fluorine (F) incorporation into TiN/HfO2/SiO2 on work function has been investigated. By process scheme optimization. F implanted through sacrificial oxide layer reveals sufficient the flat-band voltage (V-FB) shift similar to 170 mV without an equivalent oxide thickness (EOT) penalty. On the contrary, apparent EOT increasing was observed if F implanted directly through Si. Moreover, F incorporation into TiN/Al2O3/HfO2/SiO2. the V-FB shift can be up to about 250 mV or 410 mV at 10 keV with a dose of 2 x 10(15) cm(-2) or 5 x 10(15) cm(-2), respectively. Effective work function has been boosted to 4.95 eV closer to the valence band edge. Besides, interface defect density also can be improved similar to 20% by F incorporation from charge pumping result. Crown Copyright (C) 2012 Published by Elsevier B.V. All rights reserved.