In this paper, we report on transparent transistor obtained using laminar structure of two high-k dielectric oxides (hafnium dioxide, HfO2 and aluminum oxide. Al2O3) and zinc oxide (ZnO) layer grown at low temperature (60 degrees C-100 degrees C) using Atomic Layer Deposition (ALD) technology. Our research was focused on the optimization of technological parameters for composite layers Al2O3/HfO2/Al2O3 for thin film transistor structures with ZnO as a channel and a gate layer. We elaborate on the ALD growth of these oxides, finding that the 100 nm thick layers of HfO2 and Al2O3 exhibit fine surface flatness and required amorphous microstructure. Growth parameters are optimized for the monolayer growth mode and maximum smoothness required for gating. (C) 2011 Elsevier B.V. All rights reserved.