The effect of the indium content in indium tin oxide (ITO) films fabricated using a solution-based process and ITO channel thin film transistors (TFTs) was examined as a function of the indium mole ratio. The carrier concentration and resistivity of the ITO films could be controlled by the appropriate treatments. The TFTs showed an increase in the off-current due to the enhanced conductivity of the ITO channel layer with increasing indium mole ratios, producing an increase in the field effect mobility. The characteristics of the a-ITO channel TFT showed the best performance (mu(FE) of 3.0 cm(2) V-1 s(-1), V-th of 2.0 V. and S value of 0.4 V/decade) at In: Sn = 5:1. (C) 2011 Elsevier B.V. All rights reserved.