In this work the impact of doped GaAs buffer and cap layers on the bismide photoluminescence (PL) spectra has been studied. For this study three types of heterostructures were grown: a thin GaAsBi layer deposited directly onto the nominally undoped GaAs buffer layer, a GaAsBi layer grown onto the GaAs:Be layer, and a GaAsBi layer deposited onto the GaAs:Be layer and capped with the GaAs:Be layer. It has been demonstrated that p-type doping of the GaAs buffer and cap layers is resulting in a significant increase of the PL intensity. This enhancement was explained by a better photoexcited electron and hole confinement in the GaAsBi layer. Published by Elsevier B.V.