Advanced Materials, Vol.24, No.44, 5910-5910, 2012
Flexible Non-Volatile Ferroelectric Polymer Memory with Gate-Controlled Multilevel Operation
A flexible field-effect transistor with a poly(3-hexylthiophene) (P3HT) active channel and a ferroelectric poly(vinlyidene fluoride-co-trifluoroethylene) (PVDF-TrFE) insulator exhibits gate-voltage-controllable multilevel non-volatile memory characteristics with highly reliable data retention and endurance.