Advanced Materials, Vol.24, No.46, 6164-6168, 2012
High-Hole-Mobility Field-Effect Transistors Based on Co-Benzobisthiadiazole-Quaterthiophene
High-mobility organic thin film transistors based on a benzobisthiadiazole-containing polymer are presented together with their morphological and optical properties. A very tight packing pattern of "edge-on" orientated polymer chains is observed in their thin films after annealing, and the hole mobility of this polymer is up to 2.5 cm(2) V-1 s(-1).