(111)-oriented beta-SiC film was prepared on Si(111) by laser chemical vapor deposition at a laser power of 100 W, a total pressure of 200 Pa, and a deposition temperature of 1203 K. The beta-SiC film grew epitaxially on the Si(111) substrate with in-plane orientation relationship of SiC [1-10]//Si [1-10] and SiC [1-01]//Si [1-01]. The deposition rate of the beta-SiC film was 40 mu m/h, 10 times higher than that of conventional CVD.