화학공학소재연구정보센터
Journal of the American Ceramic Society, Vol.95, No.11, 3363-3365, 2012
A Low Sintering Temperature Low Loss Microwave Dielectric Material ZnZrNb2O8
A low sintering temperature microwave dielectric material ZnZrNb2O8 was reported. It exhibits a monoclinic structure, belongs to the space group P2/c (C-2h(4)), and Z = 1. The dielectric constant increased with increasing relative density. The Qf value increased with increasing packing fraction. The tau(f) increased with increasing dielectric constant. The typical values of ZnZrNb2O8 were epsilon = 30, Qf = 61 000 GHz, tau(f)=-52 x 10(-6) degrees C-1, sintered at 950 degrees C.