SbxTey films were potentiostatically electrodeposited from acidic nitric baths at room temperature by controlling the applied potential. Near-stoichiometric Sb2Te3 thin films were obtained at applied potentials between -0.15 and -0.30 V vs. saturated calomel electrode (SCE). Post-annealing in a reducing environment resulted in an improvement in the crystal structure without the evaporation of the Te element. This result was indicated by a significant reduction in the electrical resistance and decrease in the FWHM of the main diffraction peaks. The power factor (sigma S-2) increased from 44.2 to 372.1 mu W/m K-2 after annealing at 473 K. (C) 2012 Elsevier Ltd. All rights reserved.