We present a synthesis of GeSi:Mn dilute magnetic semiconductor (DMS) quantum rings and their electromagnetic properties. The GeSi:Mn rings were grown by means of a chemical vapor deposition process, and then doped with Mn using a magnetic sputtering technique. The as-grown and annealed DMS ring samples present wide and open magnetic hysteresis loops with large remnant magnetizations. The largest magnetic moment per Mn atom of 4.2 mu(B) was obtained for the annealed sample at room temperature. The voltage and magnetic resistance differences in the presence or absence of an applied magnetic field were 4 V and 163 k Omega, respectively.