Ge-rich multiple quantum well heterostructures have been investigated as engineered material for efficient thermoelectric generators monolithically integrated on silicon substrates. Thick Ge/SiGe multilayers on Si substrates designed for lateral thermoelectric devices have been grown and characterized in which electrical and thermal conduction occur parallel to the heterostructure interfaces. In this study, an overview of the investigated structures is presented together with results from X-ray scattering and transmission electron microscopy experiments. These analyses confirm the high quality of the material and the uniformity of the structure over the whole deposited thickness. Important parameters in terms of the optimization of the material quality which could affect thermoelectric properties, such as the interfaces roughness and the threading dislocation density, have also been evaluated. Preliminary electrical and Seebeck coefficient measurements indicate the viability of this material for the realization of thermoelectric devices.