A dual-functional copolymer, poly(4-styrenesulfonyl azide-co-t-butyl-methacrylate), with built-in photoacid labile and photocrosslinkable components was designed and synthesized by radical copolymerization. The mixture of copolymer and photoacid generators was spin coated on aminosilane treated Si wafers and polycarbonate (PC). When exposed to 365 nm UV light, photoacids were generated, which decomposed the acid labile groups, t-butyl-ester, to carboxylic acid in the exposed region, leading to drastic change of wettability from hydrophobic to hydrophilic after developing the film in an aqueous base solution. The patterned polymer film could be subsequently photoimmobilized on the substrate under 254 nm deep UV exposure through C-H insertion via exited azide groups. 1H-NMR and Fourier transform infrared spectra confirmed the synthesis of the copolymer, and the photodecomposition and photografting reactions occurred orthogonally at 365 and 254 nm, respectively, without interfering each other. On the patterned surfaces, including a hexagonal dot array and a gradient line array, we demonstrated selective wetting in the 365 nm exposed regions. On the gradient line array, we showed an interesting ratchet wetting pattern. Finally, we showed that the copolymer could be used to modify the wettability of PC while maintaining its high optical quality. (c) 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2013