The growth of silicon oxide nanowires (SiOxNWs) was obtained by thermal process of nickel (Ni) nanoparticles (NPs) deposited on silicon (Si) wafer in mixed gases of nitrogen (N-2) and hydrogen (H-2). TEM analysis showed that SiOxNWs had diameters ranging from 100 to 200 nm with lengths extending up to a few gm and their structure was amorphous. SiOxNWs were grown by the reaction between Ni NPs and Si wafer and Ni NPs acted as catalysts. Ni silicides (NixSi) were also formed inside the wafer by Ni diffusion into Si wafer. (C) 2012 Elsevier B.V. All rights reserved.