Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature

Pattanasattayavong P; Yaacobi-Gross N; Zhao K; Ndjawa GON; Li JH; Yan F; O'Regan BC; Amassian A; Anthopoulos TD

Advanced Materials, Vol.25, No.10, 1504-1509, 2013

DOI10.1002/adma.201202758 Export Citation

Hole-Transporting Transistors and Circuits Based on the Transparent Inorganic Semiconductor Copper(I) Thiocyanate (CuSCN) Processed from Solution at Room Temperature

Pattanasattayavong P, Yaacobi-Gross N, Zhao K, Ndjawa GON, Li JH, Yan F, O'Regan BC, Amassian A, Anthopoulos TD

Keywords:wide-bandgap p-type semiconductors;transparent transistors;copper thiocyanate;solution processing