TiCx films were deposited by atomic layer deposition using tetrakisneopentyltitanium [Ti(CH2C(CH3)3)4] and H2 plasma as the precursor and reactant, respectively. The growth of the rock-saltstructured TiCx films was confirmed by X-ray and electron diffraction. The C-to-Ti ratio determined by Rutherford backscattering spectrometry was similar to 0.52 and the film resistivity was as low as similar to 600cm with a high density of 4.41g/cm3. The step coverage was approximately 90% over the trench structure (top opening diameter of 25nm) with an aspect ratio of similar to 4.5.