Low power-driven oxide thin film transistor (TFT) with a high-k gate dielectric is fabricated by a simple solution process. Sol-gel derived Gd2O3 film exhibits the dielectric constant in the range of 9-14 with breakdown field as high as 3.5 MV cm(-1). Zn-In-Sn-O based TFTs combined with a corresponding film demonstrate the readiness of solution processed high-k film as gate insulators. The resultant device exhibits the enhanced performance with the field-effect mobility of similar to 1.9 cm(2) V-1 s(-1), which is improved by a factor of 4.5 comparing with the conventional TFT based on a SiO2 insulator, and the exceptionally low operating voltage of 6 V. (C) 2012 Elsevier B.V. All rights reserved.