joining silicon thermoelectric elements using silver-based alloys and adhesive was investigated. Selective etching silicon with HF and KOH was performed to increase the interface area. Physical vapor deposition was used to coat Ti, Cr, Pt and Ag on silicon surface to form transition layers for the enhancement of interface bonding. Sound joints using the silver adhesive were obtained and they can withstand the highest temperature of 925 degrees C. Contact resistance of the joints under both thermal cycling and isothermal heat treatment was measured from 500 degrees C to 920 degrees C. It is found that the contact resistance of the silver/silicon joints is about 1 Omega at room temperature. At the elevated temperature of 920 degrees C, the contact resistance is less than 2.5 Omega. We conclude that the silver adhesive has excellent adhesion to silicon surface and the contact resistance is considerably low. Therefore, it is suitable for joining silicon thermoelectric elements for energy conversion at high temperatures. (C) 2012 Elsevier B.V. All rights reserved.