The complex perovskite oxide Holmium nickel zirconate, Ho(Ni1/2Zr1/2)O-3 (HNZ) is synthesized by solid-state reaction technique. The X-ray diffraction pattern of the sample at room temperature shows a monoclinic phase. The microstructure analysis is done by scanning electron microscope. Alternating current impedance spectroscopy is applied to investigate the electrical properties of HNZ in a temperature range from 313 K to 723 K and in a frequency range from 100 Hz to 1 MHz. The complex impedance plane plots show that the relaxation mechanism in HNZ is due to grain boundary effect. Scaling behavior of imaginary part of impedance indicates that relaxation in HNZ describes the same mechanism at various temperatures. The frequency dependent conductivity data are fitted to the universal power law. The frequency dependent electrical data are also analyzed in the framework of electric modulus formalism. (C) 2013 Elsevier B.V. All rights reserved.