Pr-doped PbZrO3 antiferroelectric thin films have been fabricated on Pt/Ti/SiO2/Si substrates by a chemical solution deposition method. All the thin films with different Pr doping contents crystallized in perovskite phase with strong (111)-preferred orientation. When Pr doping amount was 1 mol%, the thin film exhibited a large saturation polarization of 59.4 mu C cm(-2), a high energy storage density of 14.2 J cm(-3) at about 600 kV cm(-1), and a dielectric constant of about 354 at 1 kHz. The high (111) orientation and occupying site of Pr ions were suggested to be responsible for the improved electrical properties of the thin films. (C) 2013 Elsevier B.V. All rights reserved.