To find a solution to the problem that antiferroelectric materials could not be used in thick-film based uncooled infrared detectors because of their high sintering temperature, Pb0.87Ba0.1La0.02(Zr0.7Sn0.24-Ti-0.06)O-3 + 6 wt%PbO antiferroelectric ceramics were first prepared at 1000 degrees C by using 0.8PbO-0.2B(2)O(3) glass as a sintering aid. The results showed that the addition of 0.8PbO-0.2B(2)O(3) sintering aids was beneficial for reducing the sintering temperature without deteriorating the electric properties when the content of glass was practical. The ceramics containing 1 wt% 0.8PbO-0.2B(2)O(3) sintering aids demonstrated optimal electrical field induced pyroelectric properties. The largest pyroelectric coefficient of 6100 mu C/m(2)K and figure of merit of 17 x 10(-5) Pa-0.5 were obtained in Pb0.87Ba0.1-La-0.02(Zr0.7Sn0.24Ti0.06)O-3 + 6 wt%PbO antiferroelectric ceramics with 1 wt% glass doping, which can be comparable to that of conventional phase transition materials at a high temperature sintering. The large pyroelectric coefficient and figure of merit of low temperature sintered antiferroelectric ceramics provide a basis for antiferroelectric materials used in thick-film based infrared detectors. (c) 2012 Elsevier Ltd. All rights reserved.