Growth of vertical carbon nanotubes according to the Al2O3 buffer layer preparation

Jong Seok Kim; Young-Woon Jang; Ik-Tae Im

Journal of Industrial and Engineering Chemistry, Vol.19, No.5, 1501-1506, September, 2013

DOI10.1016/j.jiec.2013.01.016 Export Citation

Growth of vertical carbon nanotubes according to the Al2O3 buffer layer preparation

Jong Seok Kim, Young-Woon Jang¹, and Ik-Tae Im^{2, †}

School of Chemical Engineering, College of Engineering, Chonbuk National University, 567 Baekjedaero, Duckjin-gu, Jeonju 561-756, Republic of Korea
¹Department of Mechanical Design Engineering, Graduate School, Chonbuk National University, 567 Baekjedaero, Duckjin-gu, Jeonju 561-756, Republic of Korea
²Department of Mechanical Design Engineering, College of Engineering, Chonbuk National University, 567 Baekjedaero, Duckjin-gu, Jeonju 561-756, Republic of Korea

E-mail:

Carbon nanotubes (CNTs) have been extensively studied for several decades due to its promising properties. In this study, effects of the Al2O3 buffer layer on the growth of the wellorganized CNTs forest were studied. The buffer layers were prepared by the two methods, direct sputtering using Al with oxygen feeding and annealing the sputtered pure Al films to obtain Al2O3 films. FE-SEM and AFM results showed that the surface of the buffer layer by the first method was more clean and smooth. The CNTs forest using the first buffer layer showed better results both in the growth length and CNTs quality.

Keywords:Vertical aligned carbon nanotubes;Buffer layer;Sputtering;Chemical vapor deposition

[References]

Hata K, Futaba DN, Mizuno K, Namai T, Yumura M, Iijima S, Science., 306, 1326 (2004)
Zhang G, Mann D, Zhang L, Javey A, Li Y, Yenilmez E, Wang Q, McVittie JP, Nishi Y, Gibbons J, Dai H, Proceedings of the National Academy of Sciences of the United States of America., 102, 16141 (2005)
Hart AJ, Slocum AH, J. Phys. Chem. B, 110(16), 8250 (2006)
Hu JL, Yang CC, Huang JH, Diamond and Related Materials., 17, 2084 (2008)
Esconjauregui S, Bayer BC, Fouquet M, Wirth CT, Ducati C, Hofmann S, Robertson J, Applied Physics Letters., 95, 173115 (2009)
Wu TC, Chang SH, Curr. Appl. Phys., 9(5), 1117 (2009)
Futaba DN, Hata K, Namai T, Yamada T, Mizuno K, Hayamizu Y, Yumura M, Iijima S, J. Phys. Chem. B, 110(15), 8035 (2006)
de los Arcos T, Oelhafen P, Thommen V, Mathys D, Journal of Physical Chemistry C., 111, 16329 (2007)
Jeong HJ, Shin YM, Jeong SY, Choi YC, Park YS, Lim SC, Park G, Han IT, Kim JM, Lee YH, Chemical Vapor Deposition., 8, 11 (2002)
de los Arcos T, Wu ZM, Oelhafen P, Chem. Phys. Lett., 380(3-4), 419 (2003)
Choi BH, Yoo H, Kim YB, Lee JH, Microelectronic Engineering., 87, 1500 (2010)
Mathur A, Roy SS, Dickinson C, McLaughlin JA, Curr. Appl. Phys., 10(2), 407 (2010)
Jeong HJ, Jeong SY, Shin YM, Han JH, Lim SC, Eum SJ, Yang CW, Kim NG, Park CY, Lee YH, Chem. Phys. Lett., 361(3-4), 189 (2002)
Jeong HJ, Eude L, Growtham M, Marquardt B, Lim SH, Enouz S, Cojocaru CS, Park KA, Lee YH, Pribat D, Nano., 3, 145 (2008)
Kim Y, Song WS, Lee SY, Choi WC, Park JY, Journal of the Korean Vacuum Society., 18, 229 (2009)
Hongo H, Nihey F, Ichihashi T, Ochiai Y, Yudasaka M, Iijima S, Chem. Phys. Lett., 380(1-2), 158 (2003)
Patole SP, Shin DW, Kim HJ, Han IT, Kwon KW, Yoo JB, Journal of Physics D:Applied Physics., 43, 095304 (2010)

[Referenced By]

[1] Hata K, Futaba DN, Mizuno K, Namai T, Yumura M, Iijima S, Science., 306, 1326 (2004)

[2] Zhang G, Mann D, Zhang L, Javey A, Li Y, Yenilmez E, Wang Q, McVittie JP, Nishi Y, Gibbons J, Dai H, Proceedings of the National Academy of Sciences of the United States of America., 102, 16141 (2005)

[3] Hart AJ, Slocum AH, J. Phys. Chem. B, 110(16), 8250 (2006)

[4] Hu JL, Yang CC, Huang JH, Diamond and Related Materials., 17, 2084 (2008)

[5] Esconjauregui S, Bayer BC, Fouquet M, Wirth CT, Ducati C, Hofmann S, Robertson J, Applied Physics Letters., 95, 173115 (2009)

[6] Wu TC, Chang SH, Curr. Appl. Phys., 9(5), 1117 (2009)

[7] Futaba DN, Hata K, Namai T, Yamada T, Mizuno K, Hayamizu Y, Yumura M, Iijima S, J. Phys. Chem. B, 110(15), 8035 (2006)

[8] de los Arcos T, Oelhafen P, Thommen V, Mathys D, Journal of Physical Chemistry C., 111, 16329 (2007)

[9] Jeong HJ, Shin YM, Jeong SY, Choi YC, Park YS, Lim SC, Park G, Han IT, Kim JM, Lee YH, Chemical Vapor Deposition., 8, 11 (2002)

[10] de los Arcos T, Wu ZM, Oelhafen P, Chem. Phys. Lett., 380(3-4), 419 (2003)

[11] Choi BH, Yoo H, Kim YB, Lee JH, Microelectronic Engineering., 87, 1500 (2010)

[12] Mathur A, Roy SS, Dickinson C, McLaughlin JA, Curr. Appl. Phys., 10(2), 407 (2010)

[13] Jeong HJ, Jeong SY, Shin YM, Han JH, Lim SC, Eum SJ, Yang CW, Kim NG, Park CY, Lee YH, Chem. Phys. Lett., 361(3-4), 189 (2002)

[14] Jeong HJ, Eude L, Growtham M, Marquardt B, Lim SH, Enouz S, Cojocaru CS, Park KA, Lee YH, Pribat D, Nano., 3, 145 (2008)

[15] Kim Y, Song WS, Lee SY, Choi WC, Park JY, Journal of the Korean Vacuum Society., 18, 229 (2009)

[16] Hongo H, Nihey F, Ichihashi T, Ochiai Y, Yudasaka M, Iijima S, Chem. Phys. Lett., 380(1-2), 158 (2003)

[17] Patole SP, Shin DW, Kim HJ, Han IT, Kwon KW, Yoo JB, Journal of Physics D:Applied Physics., 43, 095304 (2010)