Phosphorus-doped Bi2Te3 films were synthesized on a stainless-steel electrode by electrochemical deposition. X-ray diffraction, scanning electron microscopy and transmission electron microscopy confirmed that the films are single-phased Bi2Te3 solid solutions with a rhombohedral structure. The asprepared films exhibit n-type characteristics with the Hall coefficient -1.76E-2 m(3) C-1 and the electrical conductivity 280 S cm(-1). The thermal conductivity is 0.47W m(-1) K-1, which is as low as one-third of the value observed in the bulk material. The doped P atoms occupy the interstitial positions between the two adjacent Te(1) layers connected by Van der Waals interaction in Bi2Te3. (C) 2013 Elsevier B.V. All rights reserved.