The high contact resistance of organic thin film transistors (OTFTs), due to the work function difference between metal electrode and organic channel, seriously decreases the electrical properties. Graphene electrode could reduce the contact resistance and improve the electrical performance of OTFTs. However, the high chemical vapor deposition (CVD) temperature (900-1000 degrees C) limits the available OTFT substrate in the case of direct graphene growth on S/D metal electrodes. Furthermore, the application of a transferred graphene electrode induces significant problems due to the transfer process. In this work, thin graphite sheet was directly grown on a metal electrode by the inductively coupled plasma-chemical vapor deposition (ICP-CVD) method at as low temperature as 400, 500 degrees C. We show that OFETs with thin graphite sheet/metal, grown at 400, 500 degrees C, exhibit much lower contact resistance than OFETs with metal-only electrode. (C) 2013 Elsevier B. V. All rights reserved.