HMDSO 플라즈마 고분자 막의 구조가 기체의 투과 특성에 미치는 영향

남승은; 이규호

Journal of the Korean Industrial and Engineering Chemistry, Vol.6, No.3, 354-363, June, 1995

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HMDSO 플라즈마 고분자 막의 구조가 기체의 투과 특성에 미치는 영향

The Effect of Structure of Plasma Polymer Membrane Prepared from Hexadimethylsiloxane on Permselectivity

남승은, 이규호

초록

초박막 활성층은 유기 실리콘 화합물인 헥사메틸디실록산을 사용하여 플라즈마 중합에 의해 폴리 설폰 한외 여과 다공성 지지체 위에 증착시켜 제조하였으며 주사전자현미경(SEM)에 의해 방전 출력이 증가함에 따라 제조된 활성층의 두께를 관찰하였다. 방전 출력이 증가할수록 활성층의 두께가 중가하였으나 방전 출력이 30watt 이상에서 활성층의 두께는 일정하게 나타났다. 플라즈마 고분자의 화학 구조 특성을 알아 보고자 FT-IR 과 XPS spectrum을 관찰하였는 바, 제조된 플라즈마 고분자의 IR 특성 피크인 1110∼1000cm^-1에 나타난 Si-O 피크가 증가하였고 Si 원소 성분이 증가하였다. 방전 출력을 달리하여 제조된 복합막의 수소, 질소, 산소, 이산화 탄소 기체에 대한 투과 실험을 수행한 결과, 방전 출력이 증가함에 따라서 질소에 대한 산소 및 이산화탄소 기체의 선택성이 향상되었으며 수소, 질소의 투과도는 감소하였다.

Thin active layers were deposited onto polysulfone ultrafiltration porous substrates by plasma polymerization of organosilicon compounds, hexamethyldisiloxane(HMDSO). The thickness of active layer was observed by SEM : With increasing the level of radio frequency power, the thickness of active layers was increased but kept constant over 30watt to 50 watt. The characteristics of chemical structure of plasma polymer were studied by FT-IR and XPS : With increasing level of radio frequency power, the characteristic FT-IR peak of plasma polymer, Si-O stretching(1100∼ 1000cm^-1), and Si atomic composition were increased. Also, the permselectivities of oxygen and carbon dioxide over nitrogen were improved and the permeabilities of hydrogen and nitrogen were decreased with increasing the level of radio frequency power.

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[1] Yamamoto M, Sakata J, Hirai M, J. Appl. Polym. Sci., 29, 2981 (1984)

[2] Hollahan JR, Bell AT, "Techniques and Application of Plasma Chemistry," Wiley, New York (1974)

[3] Hozumi K, "Low Temperature Plasma Chemistry," Nankodo, Tokyo (1976)

[4] Yasuda H, J. Polym. Sci. Macromol. Rev., 16, 199 (1981)

[5] Boening HV, "Plasma Science and Technology," Cornell University Press, Ithaca, New York (1982)

[6] Goodman J, J. Polym. Sci., 44, 551 (1960)

[7] Segui Y, Ai B, J. Appl. Polym. Sci., 20, 1611 (1976)

[8] Boening HV, "Fundamentals of Plasma Chemistry and Technology," Technomic, Califonia (1988)

[9] Yasuda H, "Thin Film Process," J.L. Vossen and W. Kern, eds., Academic, New York (1978)

[10] Carchano H, "Thesis," Universite Paul Sabatier, Toulouse (1972)

[11] Smolinsky G, Vasile MJ, Int. J. Mass Spectrum. Ion Phys., 12, 147 (1974)

[12] Hays AK, Thin Solid Films, 84, 401 (1981)

[13] Stern SA, Shah VM, Hardy BJ, J. Polym. Sci. B: Polym. Phys., 25, 1263 (1987)

[14] Sakata J, Yamamoto M, Hirai M, J. Appl. Polym. Sci., 31, 1999 (1986)

[15] Tajma I, Yamamoto M, J. Polym. Sci. A: Polym. Chem., 23, 615 (1985)

[16] Inagaki N, Kondo S, Hirata M, Urushibata H, J. Appl. Polym. Sci., 30, 3385 (1985)

[17] Sadtler, "The Infrared Spectra Atlas of Monomers and Polymers," Philadelphia (1980)

[18] Yamamoto M, Sakata J, Hirai M, J. Appl. Polym. Sci., 31, 1999 (1986)

[19] Kokai F, Kubota T, Ichijyo M, Wakai K, J. Appl. Polym. Sci. Appl., 42, 197 (1988)

[20] Kammermeyer K, Ind. Eng. Chem., 49, 1685 (1957)

[21] Ashworth AJ, Brisdon BJ, England R, Reddy BSR, Zafar I, J. Membr. Sci., 56, 217 (1991)

[22] Kramer PW, Yeh YS, Yasuda H, J. Membr. Sci., 46, 1 (1989)

[23] Zeigler JM, Gordon FW, "Silicon Based Polymer Science," Washington (1990)

[24] Ryu JC, Kim HS, Park SY, Kim BS, Kim SW, Kim N, Polym.(Korea), 17(4), 386 (1993)

[25] Inagaki N, Kondo S, Murakami T, J. Appl. Polym. Sci., 29, 3595 (1984)

[26] Mulder M, "Basic Principles of Membrane Technology," Kluwer Academic, Netherlands (1991)