Au/2-(2-furanylmethylene) propanedinitrile/p-Si heterojunction was fabricated using conventional thermal evaporation technique. Current density-voltage (J-V) characteristics of the heterojunction were investigated at different temperatures. Tunneling conduction mechanism in the lower voltage range was identified from the forward bias (J-V) characteristics. The calculated value of the change of built-in voltage with respect to the absolute temperature is (-1.88 x 10(-3) V K-1). At higher voltages, a space charge limited current (SCLC) mechanism controlled by an exponential trapping distribution above the valence band edge was observed. The total concentration of traps was found to be 8.077 x 10(21) m(-3). Under reverse bias, the conduction mechanism is due to thermally generated carriers in the lower voltage range and the Poole-Frenkel effect is observed in the higher voltage range. The heterojunction showed a photovoltaic behavior under illumination with an open-circuit voltage of 0.19 V and a short-circuit current density of 102.7 mA m(-2). (C) 2013 Elsevier B.V. All rights reserved.