Journal of the Korean Industrial and Engineering Chemistry, Vol.7, No.1, 34-42, February, 1996
Flux법에 의한 합성 에메랄드 단결정 육성
Growth of Synthetic Emerald Single Crystal by Flux Method
초록
합성에메랄드[(BeO)3(Al2-xCrxO3)(SiO2)6〕단결정을 flux법에 의하여 육성하였다. 출발물질로 BeO, Al2O3와 SiO2 시약을 화학양론비로 혼합하여 사용하였다. 에메랄드 단결정의 성장 조건은 다음과 같다. 온도범위 ; 1150∼900℃, 냉각속도 ; 2, 4, 10℃/hr, 융제 : Li2CO3, V2O5, 첨가제 ; Cr2O3. 에메랄드 단결정의 크기는 2, 4, 10℃/hr의 냉각속도에 의존하였다. 얻어진 에메랄드 단결정을 동정하였고, 그 결과는 다음과 같다. 즉, 결정계 ;육방정계, 격자상수 ; a=0.921nm, c=0.917nm, 결정의 크기 ; 최대 0.80×0.95mm2(c×m), 방위 ; c(1000), m(1010).
Growth of synthetic emerald〔((BeO)3(Al2-xCrxO3)(SiO2)6〕single crystals was carried out by flux method. In this study, the starting materials were prepared by stoichiometric mixing of BeO, Al2O3 and SiO2 as reaching components. The conditions for the growth of synthetic emerald single crystals are as follows : temperature range ; 1150∼900℃, cooling rate ; 2, 4, 10℃/hr, flux ; Li2CO3, V2O5, dopant ; Cr2O3. The sizes of Cr2O3 emerald single crystals depending on 2, 4, 10℃/hr cooling rates. The obtained emerald single crystal was characterized and the following results were obtained : lattice parameter : a=0.921nm, c=0.917nm, crystal system ; hexagonal, crystal size ; max.0.80 × 0.95mm2(c×m), orientation ; (1000), m(1010).
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