Epitaxial BaTi2O5 (BT2) thick films were prepared on (1 0 0), (1 1 0) and (1 1 1) MgO single-crystal substrates by laser chemical vapor deposition. (0 1 0)- and (1 1 2)-oriented BT2 thick films grew epitaxially on (1 0 0) and (1 1 0) MgO substrates at deposition temperatures of 1326-1387 K and 1324-1383 K, respectively. On the (1 1 1) MgO substrate, BT2 thick film showed (3 1 (3) over tilde) and (1 1 (3) over tilde) co-orientations at 1337-1353 K. Epitaxial BT2 thick films had a columnar structure in cross-section and the deposition rate reached 42 mu m h(-1). The typical in-plane orientations of the epitaxial BT2 films were BT2 [2 0 (1) over bar]//MgO [0 (1) over bar 0] for BT2 (0 1 0)//MgO (1 0 0), BT2 [2 0 (1) over bar]//MgO [0 0 1] for BT2 (1 1 2)//MgO (1 1 0), BT2 [1 0 1]//MgO [0 (1) over bar 1] for (3 1 (3) over bar) BT2//MgO (1 1 1), and BT2 [3 0 1]//MgO [0 1 (1) over bar] for (1 1 (3) over bar) BT2//MgO (1 1 1). (C) 2012 Elsevier B. V. All rights reserved.