Films of the material systems ZnSnSb and MnGeSb doped with Fe and Co respectively have been grown by pulsed laser deposition on silicon. Room temperature Hall effect measurements show that all Fe-doped PLD films are n-type whereas MnGeSb: Co ones are p-type. Carrier concentrations vary with film thickness, resulting in similar to 10(17)-10(18) cm(-3) for ZnSnSb: Fe and similar to 10(20)-10(21) cm(-3) for MnGeSb: Co films. Carrier mobilities are of the order 10(2) cm(2)/Vs in the MnGeSb: Co films and between 10(2) and 10(3) cm(2)/V s in ZnSnSb: Fe. Curie points above room temperature have been found for samples of both material systems. (C) 2013 Elsevier B. V. All rights reserved.