p-Type transparent conducting antimony-doped tin oxide (ATO) thin films were successfully fabricated on quartz glass substrates by pulsed laser deposition using a 20 at.% Sb doped SnO2 ceramic target. The growth temperature was varied from 500 to 800 degrees C, after deposition, the thin films were rapidly annealed at 500 degrees C in air for 2 h. Several analytical tools such as X-ray diffraction (XRD), Hall measurements, fourpoint probe, field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometer were used to explore the causes of the changes in optoelectronic properties and surface micrographs. The Sb-doped SnO2 film prepared at 700 degrees C possessed the lowest resistivity of 0.87 SZ cm with a Hall mobility of 0.65 cm(2) v(-1) s(-1) and hole concentration of 1.01 x 10(19)cm(-3), while the average transmittance is about 85% in the visible light region (400-800 nm). Furthermore, SnO2-based p-n homojunction was fabricated by deposition of a Sb-doped p-type SnO2 layer on a Sb-doped n-type SnO2 layer. (C) 2013 Elsevier B.V. All rights reserved.