PboASro.6(Tio.97Mgo.03)02.97 (PST) thin films were deposited on ITO/glass substrates with (1 0 0)/(0 0 1) oriented Tb-doped-PbTiO3 (Tb-PT) layer inserted by magnetron sputtering method at room temperature. And the PST thin film is well-crystallized in (1 0 0) direction at annealing temperature of 600 C for 30 min. The oriented Tb-PT layer promotes a (1 0 0) orientation, restrains structural distortion and improves phase quality of PST thin film. The (1 0 0) oriented PST thin film has higher permittivity and lower dielectric loss compared with the randomly oriented one. The tunability of the PST thin film is dramatically improved by 90% compared to that of randomly oriented PST without Tb-PT inserting layer, from 33% for randomly oriented PST without the inserting layer to 62.66% for the oriented one with the inserting layer. It is attractable to be used in high quality dielectric tunable devices. (C) 2013 Elsevier B.V. All rights reserved.