Yttrium iron garnet films were prepared on silicon substrate by pulsed laser deposition. Compositional buffer layers composed by Ce02/YSZ (YSZ: yttria-stabilized Zr02) and multi-low temperature buffer layers (Y3A15012, Y3Al2.5Fe2.5012, Y3Fe5012) (shortened form as Ce02/YSZ and multi-LT buffer layer) were employed to achieve low ferromagnetic resonance width. The effects of buffer layers on the microstructures, crystallinity and low ferromagnetic resonance linewidth of films were studied. A FMR linewidth of 53 Oe were obtained, which was ascribed to its well crystallinity, high dense and uniform grain size. C) 2014 Elsevier B.V. All rights reserved.