Thermal properties of the AlGaN/GaN Schottky barrier diodes were investigated, using a pulsed-IV measurement technique. The thermally degraded mobility in the DC-bias configuration was restored, when the pulse-bias voltages were applied. It was observed that heat generation was minimized, using a pulse width of 500 ns and pulse period of 10 ms. For the SBDs consisting of 5 mu m of anode-cathode distance, on-resistance measured by the pulse-IV and DC-IV were 1.6 and 6.2 Omega-mm, respectively. We also demonstrated the device-width dependence of the thermal properties of the SBDs. We found that the performance of the power devices can be greatly influenced by the heat generation. (C) 2013 Elsevier B.V. All rights reserved.