Large-area, high-quality graphene was grown via thermal chemical vapour deposition from ethene on Cu substrates at 850 degrees C. The quality of the graphene was assessed using Raman spectroscopy, SEM and electrical characterisation. The Raman spectroscopy yielded excellent results with an average 2D/G ratio of similar to 2.75 and 2D FWHM of similar to 35 cm(-1) in the flake centres, indicative of single layer growth. Graphene field effect transistors were fabricated from in situ grown graphene lines, displaying mobilities of 1100 cm(2) - V-1 s(-1) and 700 cm(2) V-1 s(-1) at room temperature for holes and electrons, respectively, underlining the high quality of the graphene. (C) 2014 Elsevier B.V. All rights reserved.