Electrochimica Acta, Vol.89, 122-131, 2013
Understanding anodic wear at boron doped diamond film electrodes
This research investigated the mechanisms associated with anodic wear of boron-doped diamond (BDD) film electrodes. Cyclic voltammetry (CV), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and electrochemical impedance spectroscopy (EIS) were used to measure changes in electrode response and surface chemistry as a function of the charge passed and applied current density. Density functional theory (DFT) modeling was used to evaluate possible reaction mechanisms. The initial hydrogen-terminated surface was electrochemically oxidized at lower potentials than water oxidation (<= 1.83 V/SHE), and was not catalyzed by the hydrogen-terminated surface. In the region where water oxidation produces hydroxyl radicals (OH center dot), the hydrogen-terminated surface may also be oxidized by chemical reaction with OH center dot. Oxygen atoms became incorporated into the surface via reaction of carbon atoms with OH center dot, forming both C=O and C-OH functional groups, that were also detected by XPS measurements. Experimental and DFT modeling results indicate that the oxygenated diamond surface lowers the potential for activationless water oxidation from 2.74 V/SHE for the hydrogen terminated surface to 2.29 V/SHE for the oxygenated surface. Electrode wear was accelerated at high current densities (i.e., 500 mA cm(-2)), where SEM results indicated oxidation of the BDD film resulted in significant surface roughening. These results are supported by EIS measurements that document an increase in the double-layer capacitance as a function of the charge passed. DFT simulations provide a possible mechanism that explains the observed diamond oxidation. DFT simulation results indicate that BDD edge sites (=CH2) can be converted to COOH functional groups, which are further oxidized via reactions with OH center dot to form H2CO3(aq.) with an activation energy of 58.9 kJ mol(-1). (C) 2012 Elsevier Ltd. All rights reserved.