결정상과 분산도의 조절이 가능한 MoO<sub>3</sub>/SiO<sub>2</sub> 촉매의 제조 및 탈황반응특성 연구

하진욱

Journal of the Korean Industrial and Engineering Chemistry, Vol.10, No.2, 231-236, April, 1999

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결정상과 분산도의 조절이 가능한 MoO₃/SiO₂ 촉매의 제조 및 탈황반응특성 연구

Preparation and Catalytic Activity of Morphologically Controlled MoO₃/SiO₂ for Hydrodesulfurization

하진욱

초록

결정상과 분산도가 조절된 MoO₃/SiO₂ 담지촉매를 제조하여 촉매의 표면특성과 디벤조티오펜 탈황반응의 활성도를 고찰하였다. Mo의 표면담지량은 4 atoms Mo/nm²이었으며, 실리카 표면 위에 형성된 MoO₃의 결정상은 sintered hexagonal, sintered orthorhombic, 및 dispersed hexagonal상이었다. XRD, Raman, 및 O₂ 흡착 결과 MoO₃의 표면분산도는 sintered hexagonal3 결정은 650℃에서 MoO₂로, 1000℃에서 Mo로 환원됨을 알 수 있었다. 디벤조티오펜 탈황반응을 30기압, 350∼500℃ 온도범위에서 수행하였으며, 실험 결과 활성도는 MoO₃ 결정체의 SiO₂ 표면에서의 분산도에 비례하여 증가함을 알 수 있었다.

Several series of morphologically controlled MoO₃/SiO₂ catalysts were prepared, characterized, and tested for hydrodesulfurization (HDS) of dibenzothiophene (DBT) activity. Molybdenum surface loaded with 4.0 atoms Mo/nm² was prepared as sintered hexagonal and sintered orthorhombic, as well as a novel "well dispersed hexagonal" phase. Characterization by XRD, Raman, and O₂ chemisorption results reveals that the dispersion of MoO₃ over sillica depends on the final MoO₃ phase in the order of; sintered hexagonal3 reduce to MoO₂ at 650℃ and to Mo metal at 1000℃. HDS of DBT was performed in a differential reactor at 30 atm over the temperature range 350∼500℃. Activity of MoO₃/SiO₂ toward HDS of DBT is proportional to dispersion.

Keywords:MoO₃/SiO₂;HDS;XRD;Raman;TPR

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[13] Schuit GCA, Int. J. Quantum Chem., 12(S2), 43 (1977)

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[15] Ha JW, J. Ind. Eng. Chem., 2(2), 137 (1996)