화학공학소재연구정보센터
International Journal of Hydrogen Energy, Vol.36, No.24, 15906-15912, 2011
On a heterostructure field-effect transistor (HFET) based hydrogen sensing system
An interesting heterostructure field-effect transistor (HFET) based hydrogen sensing system is developed and demonstrated. Even at a low hydrogen concentration of 15 ppm H(2)/air, the studied sensor still exhibits high sensitivity at room temperature. Furthermore, a simple sensing system is also designed and reported. In contrast to conventional hydrogen measurement, the detecting system consists of a hydrogen sensor and some sensing circuits. This proposed hydrogen detection system is based on the micro-controller with advantages of low cost, fast response, portable, and easy operation. From experimental results, the proposed system is shown to be good for use. Copyright (C) 2011, Hydrogen Energy Publications, LLC. Published by Elsevier Ltd. All rights reserved.