The photoefficiency of CdS/TiO2 electrodes can be enhanced by employing efficient method of CdS sensitization from which, the contact area, thickness of CdS layer, and the recombination of photoelectrons with electrolyte can be controlled. Here, we demonstrate a simple solvothermal approach of CdS quantum dots (QDs) sensitization on TiO2 nanoparticle (NP) film coated on FTO. Our new approach prevents the clogging of CdS QDs and promotes uniform deposition of QDs throughout the mesoporous TiO2 NP film. The sensitization of CdS can be controlled by the reaction time and the concentration of the precursors. The solvothermally sensitized photoanodes exhibit enhanced photocurrents and fill factors and improved photostability in aqueous solution compared to the one prepared by a conventional SILAR method. Open-circuit potential decay measurement under shutting off illumination shows that the lifetime of photoelectron is extended with solvothermally prepared CdS layer, indicating efficient suppression of recombination of the accumulated electron in TiO2 to the electrolyte. This methodology can be applied in making more efficient heterojunctions consisting of CdS and other wide band gap oxide semiconductors which could improve charge separation and mitigate charge recombination for photoelectrochemical applications. (C) 2013 Elsevier Inc. All rights reserved.