In this paper a thermodynamic-kinetic model of the MOCVD growth process of InGaAs/GaAs heterostructures with quantum wells using Ga(C2H5)(3) - In(CH3)(3) - AsH3 system materials was worked out. The effect of segregation broadening was taken into account in that model. Using this model, methods of considerable decreasing of indium segregation were investigated. (C) 2012 Elsevier B.V. All rights reserved.