In this report, effects of ammonia nitridation and low temperature InN buffer growth were investigated to improve the crystalline quality of InN(10 (1) over bar3) grown on GaAs(110) by metalorganic vapor phase epitaxy (MOVPE). InN(10 (1) over bar3) single crystal including less than 0.1% of differently oriented domains was successfully grown by inserting low temperature InN buffer layer. The full width at half maximum (FWHM) values of InN(10 (1) over bar3) epitaxial layer were drastically decreased from 89 arcmin to 55 arcmin after processing ammonia nitridation of GaAs(110) substrate surface. Furthermore, the FWHM value was decreased to 38 arcmin by increasing growth time, and the mechanism of dislocation annihilation happened during epitaxial growth was discussed. (c) 2013 Elsevier B.V. All rights reserved.