Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region

Rossow U; Kruse A; Jonen H; Hoffmann L; Ketzer F; Langer T; Buss R; Bremers H; Hangleiter A; Mehrtens T; Schowalter M; Rosenauer A

Journal of Crystal Growth, Vol.370, 105-108, 2013

DOI10.1016/j.jcrysgro.2012.09.057 Export Citation

Optimizing the growth process of the active zone in GaN based laser structures for the long wavelength region

Rossow U, Kruse A, Jonen H, Hoffmann L, Ketzer F, Langer T, Buss R, Bremers H, Hangleiter A, Mehrtens T, Schowalter M, Rosenauer A

InzGa1-xN/GaN quantum well (QW) structures grown on c-plane surfaces for long wavelength laser structures have been investigated. We found that temperature ramping in the barriers improves the layer structure in avoiding V-pit formation and improves the homogeneity of indium incorporation. In choosing proper temperature profiles degradation of the QWs can be avoided. We demonstrate optical gain for wavelengths larger than 500 nm using structures with an active zone grown in such way. (C) 2012 Elsevier B.V. All rights reserved.

Keywords:Low press. Metalorganic vapor phase epitaxy;Quantum wells;Laser epitaxy;Nitrides;Semiconducting III-V materials