Post-annealing treatment in nitrogen gas flow has been carried out for P-doped Zna(1 - x)M(x) Te layer grown under a Te-rich or Te-poor condition by metalorganic vapor phase epitaxy. The electrical and photoluminescence properties of P-doped Zn1 - xMgxTe layers are altered by annealing treatment. The post-annealing is very effective in obtaining p-type conductive Zn1 - xMgx,Te for the layer grown under a Te-poor condition. On the other hand, Zn1 - xMgxTe layer is characterized by a high compensation ratio and DAP luminescence for the layer grown under a Te-rich condition, even after annealing treatment. Similar tendencies are also found in P-doped ZnTe layers. (c) 2012 Elsevier B.V. All rights reserved.