Bi-crystal silicon ingots with low angle grain boundaries have been grown at three different pulling rates, namely 3 mu m/s, 13 mu m/s and 40 mu m/s, in a small scale Bridgman type furnace. The melts have been contaminated with 50 ppma of copper or indium. Selected samples were investigated by secondary ion mass spectrometry (SIMS) chemical analysis. The results show an influence of growth rate on copper segregation. Indium segregation has also been investigated. Relative impacts of solid state diffusion and solute microsegregation during solidification on the grain boundary concentration have been investigated for each growth rate. (C) 2013 Elsevier B.V. All rights reserved.