beta-FeSi2 films were epitaxially grown by atomic-hydrogen-assisted molecular beam epitaxy (MBE) on high-resistive n-type floating-zone (FZ) Si(1 1 1) (rho > 1000 Omega cm). They showed n-type conduction with a reduced electron concentration of an order of 10(16) cm(-3) at room temperature (RT). In contrast, beta-FeSi2 films prepared without atomic hydrogen or prepared with molecular hydrogen showed p-type conduction with a large hole density of over 10(18) cm(-3). These results show that the atomic-hydrogen irradiation is an effective means to reduce the residual carrier concentration in undoped beta-FeSi2 films. (c) 2013 Elsevier B.V. All rights reserved.