Journal of Crystal Growth, Vol.378, 385-387, 2013
Spin-injection into epitaxial graphene on silicon carbide
We have studied the spin-injection properties in epitaxial graphene on SiC. The ferromagnetic metal (FM) electrodes were composed of a tunnel barrier layer AlOx (14 angstrom) and a ferromagnetic Co (600 angstrom) layer. We have successfully observed the clear resistance peaks indicating spin-injection both in the "local" and "non-local" spin measurement set-ups at low temperatures. We estimate spin-injection rate of 1% based on "non-local" measurement and 1.6% based on local measurements. Spin-injection rate of multilayer graphene by mechanical exfoliation method was twice as high as single layer graphene on SiC based on "local" measurement. (c) 2013 Elsevier B.V. All rights reserved.